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STN2NE10 Datasheet
Datasheet specifications
| Datasheet's name | STN2NE10 |
|---|---|
| File size | 79.416 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet STN2NE10 |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: STMicroelectronics
- Series: STripFET™
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
- Base Part Number: STN2N
- detail: N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT-223